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1. product pro?le 1.1 general description standard level n-channel enhancement mode field-effect transistor (fet) in a surface-mounted plastic package using trenchmos technology. 1.2 features 1.3 applications 1.4 quick reference data 2. pinning information PML340SN n-channel trenchmos standard level fet rev. 01 24 august 2006 product data sheet n standard level threshold n low pro?le and small footprint n very low thermal impedance n low on-state resistance n primary side switching n dc-to-dc converters n v ds 220 v n i d 7.3 a n r dson 386 m w n q gd = 4.25 nc (typ) table 1. pinning pin description simpli?ed outline symbol 1, 2, 3 source (s) sot873-1 (hvson8) 4 gate (g) 5, 6, 7, 8 drain (d) 1234 8765 transparent top view s d g mbb076
PML340SN_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 24 august 2006 2 of 12 philips semiconductors PML340SN n-channel trenchmos standard level fet 3. ordering information 4. limiting values table 2. ordering information type number package name description version PML340SN hvson8 plastic thermal enhanced very thin small outline package; no leads; 8 terminals; body 3.3 3.3 0.85 mm sot873-1 table 3. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage 25 c t j 150 c - 220 v v gs gate-source voltage - 20 v i d drain current t mb =25 c; v gs = 10 v; see figure 2 and 3 - 7.3 a t mb = 100 c; v gs = 10 v; see figure 2 - 4.4 a i dm peak drain current t mb =25 c; pulsed; t p 10 m s; see figure 3 -14a p tot total power dissipation t mb =25 c; see figure 1 -50w t stg storage temperature - 55 +150 c t j junction temperature - 55 +150 c source-drain diode i s source current t mb =25 c - 7.6 a i sm peak source current t mb =25 c; pulsed; t p 10 m s - 14 a avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy unclamped inductive load; i d = 3.5 a; t p = 0.05 ms; v ds 220 v; r gs =50 w ; v gs = 10 v; starting at t j =25 c -22mj
PML340SN_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 24 august 2006 3 of 12 philips semiconductors PML340SN n-channel trenchmos standard level fet fig 1. normalized total power dissipation as a function of mounting base temperature fig 2. normalized continuous drain current as a function of mounting base temperature t mb =25 c; i dm is single pulse fig 3. safe operating area; continuous and peak drain currents as a function of drain-source voltage 03ne36 0 40 80 120 0 50 100 150 200 t mb ( c) p der (%) 03ne37 0 40 80 120 0 50 100 150 200 t mb ( c) i der (%) p der p tot p tot 25 c () ----------------------- - 100 % = i der i d i d25 c () -------------------- 100 % = 003aab516 10 -1 1 10 10 2 1 10 10 2 10 3 v ds (v) i d (a) dc 1 ms 100 m s limit r dson = v ds / i d 10 ms 10 m s t p =
PML340SN_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 24 august 2006 4 of 12 philips semiconductors PML340SN n-channel trenchmos standard level fet 5. thermal characteristics table 4. thermal characteristics symbol parameter conditions min typ max unit r th(j-mb) thermal resistance from junction to mounting base see figure 4 - - 2.5 k/w fig 4. transient thermal impedance from junction to mounting base as a function of pulse duration 003aab517 10 -2 10 -1 1 10 10 -5 10 -4 10 -3 10 -2 10 -1 1 t p (s) z th(j-mb) (k/w) single pulse 0.2 0.1 0.05 d = 0.5 0.02 t p t p t t p t d =
PML340SN_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 24 august 2006 5 of 12 philips semiconductors PML340SN n-channel trenchmos standard level fet 6. characteristics table 5. characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d = 250 m a; v gs =0v t j =25 c 220 - - v t j = - 55 c 196 - - v v gs(th) gate-source threshold voltage i d = 1 ma; v ds =v gs ; see figure 9 and 10 t j =25 c 234v t j = 150 c 1.2 - - v t j = - 55 c - - 4.4 v i dss drain leakage current v ds = 176 v; v gs =0v t j =25 c --1 m a t j = 150 c - - 100 m a i gss gate leakage current v gs = 20 v; v ds = 0 v - 10 100 na r g gate resistance f = 1 mhz - 0.6 - w r dson drain-source on-state resistance v gs = 10 v; i d = 2.6 a; see figure 6 and 8 t j =25 c - 320 386 m w t j = 150 c - 768 927 m w v gs =6v; i d = 2.5 a - 330 396 m w dynamic characteristics q g(tot) total gate charge i d = 2.6 a; v ds = 110 v; v gs =10v; see figure 11 and 12 - 13.2 - nc q gs gate-source charge - 2.5 - nc q gs1 pre-v gs(th) gate-source charge - 1.72 - nc q gs2 post-v gs(th) gate-source charge - 0.78 - nc q gd gate-drain charge - 4.25 - nc v gs(pl) gate-source plateau voltage - 4.35 - v c iss input capacitance v gs =0v; v ds = 30 v; f = 1 mhz; see figure 14 - 656 - pf c oss output capacitance - 69 - pf c rss reverse transfer capacitance - 24 - pf t d(on) turn-on delay time v ds = 100 v; r l = 100 w ; v gs =10v; r g = 5.6 w -9-ns t r rise time - 11.8 - ns t d(off) turn-off delay time - 19.8 - ns t f fall time - 4.5 - ns source-drain diode v sd source-drain voltage i s = 2.8 a; v gs = 0 v; see figure 13 - 0.8 1.2 v t rr reverse recovery time i s = 3.2 a; di s /dt = - 100 a/ m s; v gs =0v; v r = 120 v - 111 - ns q r recovered charge - 340 - nc
PML340SN_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 24 august 2006 6 of 12 philips semiconductors PML340SN n-channel trenchmos standard level fet t j =25 ct j =25 c fig 5. output characteristics: drain current as a function of drain-source voltage; typical values fig 6. drain-source on-state resistance as a function of drain current; typical values t j =25 c and 150 c; v ds >i d r dson fig 7. transfer characteristics: drain current as a function of gate-source voltage; typical values fig 8. normalized drain-source on-state resistance factor as a function of junction temperature 003aab163 0 2 4 6 8 10 012345 v ds (v) i d (a) 4 5 3.8 v gs (v) = 10 4.5 4.4 4.2 003aab164 0 200 400 600 800 0246810 i d (a) r dson (m w ) 4 3.8 5 10 v gs (v) = 4.5 4.2 003aab165 0 2 4 6 8 10 012345 v gs (v) i d (a) t j = 150 c 25 c 03al52 0 1 2 3 -60 0 60 120 180 a t j ( c) a r dson r dson 25 c () ----------------------------- - =
PML340SN_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 24 august 2006 7 of 12 philips semiconductors PML340SN n-channel trenchmos standard level fet i d = 1 ma; v ds =v gs t j =25 c; v ds =5v fig 9. gate-source threshold voltage as a function of junction temperature fig 10. sub-threshold drain current as a function of gate-source voltage i d = 2.6 a; v ds = 110 v fig 11. gate-source voltage as a function of gate charge; typical values fig 12. gate charge waveform de?nitions t j ( c) - 60 180 120 060 03aa32 2 3 1 4 5 v gs(th) (v) 0 max typ min 03aa35 v gs (v) 06 4 2 10 - 4 10 - 5 10 - 2 10 - 3 10 - 1 i d (a) 10 - 6 min typ max 003aab166 0 2 4 6 8 10 0481216 q g (nc) v gs (v) v ds = 176 v 110 v 44 v 003aaa508 v gs v gs(th) q gs1 q gs2 q gd v ds q g(tot) i d q gs v gs(pl)
PML340SN_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 24 august 2006 8 of 12 philips semiconductors PML340SN n-channel trenchmos standard level fet t j =25 c and 150 c; v gs =0v v gs = 0 v; f = 1 mhz fig 13. source current as a function of source-drain voltage; typical values fig 14. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 003aab167 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1 v sd (v) i s (a) t j = 25 c 150 c 003aab168 10 10 2 10 3 10 -1 1 10 10 2 v ds (v) c (pf) c iss c rss c oss
PML340SN_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 24 august 2006 9 of 12 philips semiconductors PML340SN n-channel trenchmos standard level fet 7. package outline fig 15. package outline sot873-1 (hvson8) references outline version european projection issue date iec jedec jeita sot873-1 sot873-1 05-06-16 05-06-21 dimensions (mm are the original dimensions) hvson8: plastic thermal enhanced very thin small outline package; no leads; 8 terminals; body 3.3 3.3 0.85 mm - - - - - - - - - unit a max. a 1 bc ee 1 l 1 y w v mm 1 0.05 0.00 0.35 0.25 0.2 3.4 3.2 0.65 1.68 1.58 0.05 0.1 y 1 0.1 0.1 1.95 0.55 0.45 l 2 0.52 0.42 de 3.4 3.2 d h e h 2.3 2.2 0 1 2 mm scale detail x a a 1 c b e 1 e a c b v m c w m l 1 l 2 e h d h 8 4 1 5 terminal 1 index area e terminal 1 index area d x b a c y c y 1
PML340SN_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 24 august 2006 10 of 12 philips semiconductors PML340SN n-channel trenchmos standard level fet 8. revision history table 6. revision history document id release date data sheet status change notice supersedes PML340SN_1 20060824 product data sheet - -
PML340SN_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 24 august 2006 11 of 12 philips semiconductors PML340SN n-channel trenchmos standard level fet 9. legal information 9.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .semiconductors .philips .com. 9.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. philips semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local philips semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 9.3 disclaimers general information in this document is believed to be accurate and reliable. however, philips semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes philips semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use philips semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a philips semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. philips semiconductors accepts no liability for inclusion and/or use of philips semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale philips semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .semiconductors .philips .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by philips semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. trenchmos is a trademark of koninklijke philips electronics n.v. 10. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
philips semiconductors PML340SN n-channel trenchmos standard level fet ? koninklijke philips electronics n.v. 2006. all rights reserved. for more information, please visit: http://www.semiconductors.philips.com. for sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. date of release: 24 august 2006 document identifier: PML340SN_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 11. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 9 legal information. . . . . . . . . . . . . . . . . . . . . . . 11 9.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 9.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 9.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 9.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 10 contact information. . . . . . . . . . . . . . . . . . . . . 11 11 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

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